See warnings in the manual of the unit under test before proceeding. The invention belongs to the technical field of power semiconductor devices, and particularly relates to a doublepulse test method for an insulated gate bipolar transistor igbt module. Igbt discrete is subdivided in discrete igbt with antiparallel diode, discrete igbt without antiparallel diode, 600 v 1200 v ultra soft diode and 650 v rapid 1 and rapid 2 diode. On and off of the tested igbt module can be controlled by adding a driving positive voltage and a negative voltage between the grid and the emitter of the tested igbt module. To test an igbt with multimeter, the meter should be used in diodechecking mode. Only the igbt testing is presented here for brevity. With multimeter in diodecheck mode, the collector to emitter. Simple transistor tester circuit for bipolar transistors. The insulated gate bipolar transistor igbt is a semiconductor device with three terminals and is used mainly as an electronic switch. Miller electric 156 114 owners manual pdf download. Igbt gate driver reference design for parallel igbts with. Failure mechanisms of insulated gate bipolar transistors igbts nathan valentine, dr. Pdf the insulatedgate bipolar transistors igbt and.
The punchthrough igbt used the epitaxial wafer and the carriers were highinjected from the collector side to obtain the low on state voltage. For the test procedure you will need a multimeter that is capable of measuring resistance and has a diode check symbol for testing diodes. An application note for an igbt failure check process. How to check an igbt electrical engineering stack exchange. Testing igbt leakage current by using a test jig using 9 volt batteries. Igbt short circuit safe operating area soa capability. In this circuit, we have used two leds for displaying the condition.
The importance of the correct mounting procedure for igbt modules should not be underestimated. View and download miller electric 156 114 owners manual online. The insulated gate bipolar transistor igbt is a step1 igbt testing with multimeter. Dynamic switching test technology for igbt chip under high.
Procedure for testing the igbt and relays in the centric. We generally do not recommend retesting by the customer because of the potential of damaging the device. Or, directly access the download page through the following url. This type of igbt testing procedure for amperis battery discharger is not complete, because in order to verify the complete efficiency of these modules its necessary to test them in real operating conditions however, this procedure is useful for a rapid passfail test.
The design procedure, including considerations of reliability, measurement, and cooling, for a 5 kw flexible power. Evaluate power device efficiency with doublepulse testing. The most important parasitic components that influences switching performance are shown in this model. Remove the two screws from the bottom of the rack figure 21. Igbt ilscp24 installation and operation manual pdf. Most manufacturers igbt devices are 100% tested before shipping and guaranteed to meet the published parametric data. Test the input and output signals in the power supply function design, signal waveform and main parameters. Cn102156253a doublepulse test method for igbt module. Those that know what an igbt is, know what a psu is, know what a megger is, know where the ge is. Pdf design, analysis, and testing of ppigbtbased submodule.
Warning igbt modules are very sensitive to esd electro static discharge. This video will show you the proper way to test if an igbt is functioning properly. Igbt module characteristics before system debugging, especially for testing igbt and corresponding diode characteristics under different load conditions based on bridge topology. This book will provide students of power electronics with valuable information about the main contemporary power semiconductors and the applications in which they are used, while development engineers.
A collectoremitter junction test and a gate oxide test. Figure 3 shows the results of measurement with the photoelastic camera of the distribution of stress generated between the igbt module and fin. Cn102156253b doublepulse test method for igbt module. Failure mechanisms of insulated gate bipolar transistors. Pnp test procedure connect the meter leads with the polarity as shown and verify that the base toemitter and base tocollector junctions read as a forward biased diode. View and download igbt ilscp24 installation and operation manual online. Connect the emitter and the gate pin of igbt to c and e plugs in the probe terminals of the. It should have battery voltage of less than 20v a typical unit using 9v battery is alright. Igbt and frd fast recovery diode chips are mounted on one side of the aln aluminiumnitride or alumina dcb direct copper bonded substrate using lead free solder. A read is counted each time someone views a publication summary such as the title, abstract, and list of authors, clicks on a figure, or views or downloads the fulltext.
It should have battery voltage of less than 20v a typical. The igbt must be uniformly clamped across the whole electrode surface and the clamp force must be within the datasheet limits. Igbt discrete situated itself as the market leader through groundbreaking innovation and application focus. The above one is a simple transistor tester circuit. Many designers view igbt as a device with mos input characteristics and bipolar output characteristic that is a voltagecontrolled bipolar device.
The insulated gate bipolar transistor igbt is a minoritycarrier device with high input impedance and large bipolar currentcarrying capability. Failure mechanisms of insulated gate bipolar transistors igbts. How to test an igbt using multimeter electronics post. Performance and reliability testing of modern igbt devices. In this device, lower resistance can be obtained even at high current because of the conductivity. Switching losses are inevitable in any power device. Design considerations for using igbt modules in inverters.
But these losses can be minimized through optimization and rigorous measurement of design parameters related to power efficiency. With a multimeter set to check diodes, check across the c1. Change the probes, you should see a diode drop on the meter. The aim of this paper is to develop a prognostic technique for. Dumitru anghelus master thesis aalborg universitet. Industrial igbt modules application note an 20 explanation of technical information 2 1105 v1.
For the characterization we use pt trench igbt as well as spt igbt. Tektronix 576 type curve tracer as an example, the test procedure is given in the following process. The importance of correct igbt module mounting procedures. In this work, the physicsbased electrothermal leturcqpalmer igbt model, which has been proven, different conditions to validate the model accuracy.
The preferred test method to measure the switching parameters of mosfets or igbts is the doublepulsetest method. Most manufacturers igbt devices are % tested before shipping and equipment requirement dmm with diode check mode and battery voltage less than. Igbt ct60amdatasheet short out g1 to e1 and g2 to e2. An fem finite element method analysis was also performed at the same time. An igbt module that has been found to be faulty can be checked by testing it on a transistor characteristics measuring device called a transistor curve tracer. The insulated gate bipolar transistor igbt is the most used semiconductor switching device due to its advantage of lower onstate voltage in comparison with the mosfet at voltage levels above 800 v, and low conduction losses in comparison with the bipolar transistor. The dcb is also soldered to the copper or aluminium. Pdf test setup for accelerated test of high power igbt modules. In all applications where igbt modules are used, failure events can occur leading to high fault currents. Technologies, driver and application the aim of this book is to give the reader an understanding of the specific fundamentals of igbt in conjunction with their application. Igbt ilscp24 installation and operation manual pdf download. With a multimeter set to check diodes, check across the c1c2e1 junction. The matter will be the dielectric aspect in the case of high voltage testing.
Procedure for testing the igbt in the centric warning. Pdf voltage sourced converter vsc highvoltage direct current hvdc is moving to higher dc voltage and capacity, such as 500 kv3000 mw. All igbt modules should be corectly fitted to a suitable heatsink to ensure that heat can be taken away from the module and therefore ensure the tjmax maximum junction temperature of the igbt is not exceeded. Provides fully automated power testing cycling simple touchscreen user interface for mosfet, igbt and generic twopole devices up to 3 simultaneously records diagnostic information during test. Pdf several accelerated test methods exist in order to study the failures mechanisms of the high power igbt modules like temperature cycling test or. Reverse the meter connections to the transistor and verify that both pn junctions do not conduct. Testing dual igbt modules of amperis battery discharger. Sutrisno, fault detection and prognostics of insulated gate bipolar transistor igbt using knearest neighbor. Lemsys pro acdc family range and trd, trs, trds equipement family. An201105 industrial igbt modules explanation of technical. With the module out of circuit, remove the conductive foam and short the gate to the emitter. Fundamentals of mosfet and igbt gate driver circuits figure 2.
It is characterized by fast switching and high efficiency, which makes it a necessary component in modern appliances such as lamp ballasts, electric cars and variable frequency drives vfds. Igbt or insulated gate bipolar transistor is a device that combines the metal oxide semiconductor field effect transistormosfet gate driving characteristics with the high current and low saturation voltage of bipolar transistor. Igbtct60amdatasheet short out g1 to e1 and g2 to e2. A large stress was found to be generated in the area surround. Before starting this procedure, ensure that the capacitors are fully discharged by measuring the dc voltage on the dc link rectifier side. Upon a desat detect, a mute logic immediately blocks the output of the isolator and initiates a softturnoff procedure, which disables outh and reduces the voltage at outl over a minimum time span of 2. Explanation of the igbt modules failure mode and methods of checking for electrical characteristics during breakdown. If the turn off delay of a large igbt is perhaps 1500ns at max temperature, with a propagation delay through the galvanically isolated gate drive circuit of 500ns worst case, with a worst case motion control engine interrupt of 2000ns and a current transducer settling time of 1us, the igbt in the circuit must then be able to withstand. Fundamentals of mosfet and igbt gate driver circuits. An201105 industrial igbt modules explanation of technical information ifag ipc aps. Power mosfet models figure 2c is the switching model of the mosfet.